Infineon BSZ025N04LSATMA1 40V N-Channel MOSFET: Datasheet, Application Circuit, and Typical Characteristics
The Infineon BSZ025N04LSATMA1 is a state-of-the-art N-Channel MOSFET engineered using Infineon's advanced OptiMOS™ 25V/40V technology. This power MOSFET is designed to deliver exceptional efficiency and robustness in a compact package, making it an ideal choice for a wide array of power management applications. Its key specifications are defined by an extremely low typical on-resistance (R DS(on)) of just 0.85 mΩ at 10 V and a continuous drain current (I D) of 92 A, all housed in the space-saving PG-TSON-8 (5.6x6) package.
This combination of ultra-low resistance and high current handling capability is paramount for minimizing conduction losses, which directly translates to higher system efficiency and reduced thermal stress. The 40V drain-source voltage (V DS) rating makes it particularly suitable for automotive applications, industrial motor drives, and high-current DC-DC converters in server and telecom systems.
Datasheet Overview
The datasheet for the BSZ025N04LSATMA1 provides comprehensive information necessary for design-in. Key parameters include:
Electrical Characteristics: Detailed tables for threshold voltage (V GS(th)), gate charge (Q G), and capacitance values (C iss, C oss, C rss).
Switching Characteristics: Graphs and specifications outlining turn-on, turn-off, and reverse recovery times.
Safe Operating Area (SOA): Diagrams defining the current and voltage limits for safe operation under both pulsed and DC conditions.
Thermal Characteristics: Specifications for junction-to-ambient (R thJA) and junction-to-case (R thJC) thermal resistances, crucial for heatsink design.
Application Circuit
A primary application for this MOSFET is in synchronous rectification circuits within high-efficiency switch-mode power supplies (SMPS). In a typical synchronous buck converter topology, the BSZ025N04LSATMA1 is used as the low-side switch. Its ultra-low R DS(on) is critical here, as it minimizes the voltage drop across the MOSFET when it conducts, replacing a traditional diode and drastically reducing the power loss that would otherwise be dissipated as heat.
A simplified circuit involves:
1. A high-side switch (another MOSFET).
2. The BSZ025N04LSATMA1 as the low-side switch.
3. An inductor and output capacitor forming the filter stage.
4. A dedicated PWM controller IC that generates complementary signals to drive the gates of the two MOSFETs, ensuring they are never on simultaneously to prevent shoot-through current.
Typical Characteristics
The typical characteristics graphs in the datasheet are invaluable for predicting real-world performance:
Output Characteristics: A graph of I D vs. V DS for various V GS voltages, showing the device's behavior in the ohmic and saturation regions.
Transfer Characteristics: A plot of I D vs. V GS, illustrating the transconductance (g fs) of the device.
R DS(on) vs. Gate-Source Voltage: This curve shows how the on-resistance drops as the gate drive voltage increases, typically stabilizing above 5-6V.
Switching Loss vs. Drain Current: These graphs help designers estimate the total power loss during switching transitions, which is vital for calculating overall efficiency and thermal management requirements.
ICGOOODFIND: The Infineon BSZ025N04LSATMA1 stands out as a superior component for modern power electronics, offering an unparalleled blend of ultra-low conduction loss, high current capability, and excellent thermal performance in a miniature footprint. Its characteristics make it a go-to solution for designers aiming to push the boundaries of power density and efficiency in demanding applications like automotive systems and advanced computing.
Keywords: OptiMOS™, Low R DS(on), Synchronous Rectification, Power Efficiency, N-Channel MOSFET.
