**HMC736LP4E: A 6 GHz to 26 GHz, GaAs MMIC pHEMT Low Noise Amplifier**

The **HMC736LP4E** represents a state-of-the-art **GaAs MMIC pHEMT Low Noise Amplifier** (LNA) designed to meet the demanding requirements of modern microwave and millimeter-wave systems. Operating over an exceptionally wide frequency range from **6 GHz to 26 GHz**, this amplifier is engineered to provide superior performance in applications such as point-to-point and point-to-multi-point radios, satellite communications, test equipment, and radar systems.

Fabricated using a **0.15 µm GaAs pHEMT process**, the HMC736LP4E delivers outstanding **low noise figure**, typically **1.8 dB** across the majority of its operating band, which is critical for maintaining signal integrity in sensitive receiver chains. Complementing its noise performance, the amplifier provides a high **small-signal gain of 18 dB**, ensuring that weak incoming signals are sufficiently amplified for subsequent processing stages. Furthermore, it achieves a high output IP3 of +26 dBm, underscoring its excellent **linearity** and ability to handle strong interfering signals without significant distortion.

Housed in a compact, RoHS-compliant 4x4 mm QFN leadless package, the device is designed for ease of integration into complex multi-chip modules (MCMs) and printed circuit boards (PCBs). Its **single positive supply voltage of +4V** simplifies power management, while the integrated DC blocking capacitors on both RF input and output ports further reduce external component count and board space.

**ICGOOODFIND**: The HMC736LP4E stands out as a premier solution for high-frequency systems, masterfully balancing wide bandwidth, exceptionally low noise, high gain, and robust linearity in a highly integrated and miniature form factor.

**Keywords**: Low Noise Amplifier (LNA), GaAs pHEMT, Wideband Amplifier, Microwave Amplifier, High Linearity.