Infineon BGSA14GN10: A High-Performance RF Switch for Advanced Wireless Applications

Release date:2025-10-29 Number of clicks:77

Infineon BGSA14GN10: A High-Performance RF Switch for Advanced Wireless Applications

The relentless drive for faster, more reliable, and more efficient wireless connectivity is a defining feature of modern technology. At the heart of these advanced systems, particularly in smartphones, IoT devices, and infrastructure equipment, are critical components like RF switches. The Infineon BGSA14GN10 stands out as a premier single-pole four-throw (SP4T) RF switch engineered to meet the stringent demands of next-generation wireless applications.

This switch is built on Infineon's robust and proven SOI (Silicon on Insulator) technology, which is fundamental to its exceptional performance. SOI technology provides superior isolation between the control logic and the RF signal path, resulting in very low insertion loss and high linearity. For the BGSA14GN10, this translates to outstanding performance across a wide frequency band from 50 MHz up to 6.0 GHz, making it an ideal solution for a vast array of standards including 5G, LTE, Wi-Fi 6/6E, Bluetooth, and GPS.

Key to its high-performance credentials is its remarkably low insertion loss, typically just 0.35 dB at 1 GHz and 0.5 dB at 2.5 GHz. This ensures maximum signal strength is preserved, which is crucial for maintaining link quality and data rates. Furthermore, the switch exhibits exceptional linearity, with an IP3 (Third-Order Intercept Point) of up to 68 dBm. This high linearity prevents the generation of unwanted intermodulation distortion, a critical factor in crowded spectral environments where multiple bands operate simultaneously. It allows the switch to handle high-power signals without degrading adjacent channels, ensuring clear signal transmission and reception.

The device is designed for convenience and integration ease. It features an integrated driver, simplifying the interface with the system's microcontroller by operating with a low voltage control of 1.8 V. Its high power handling capability of up to 38 dBm (CW) at 3.6 V makes it robust against power surges and suitable for transmitter paths. Despite its powerful capabilities, the BGSA14GN10 is housed in an ultra-compact, lead-free TSNP-14-5 (1.1 x 1.5 mm²) package, enabling manufacturers to save valuable PCB space in increasingly dense electronic designs.

ICGOOODFIND: The Infineon BGSA14GN10 is a top-tier RF switch that combines ultra-low insertion loss, high linearity, and robust power handling in a miniature form factor. It is an optimal component for designers aiming to enhance the performance and reliability of cutting-edge wireless devices operating across all major cellular and connectivity bands.

Keywords: RF Switch, SOI Technology, Low Insertion Loss, High Linearity, 5G

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