Infineon IPD60R460CE: 600V CoolMOS™ CE Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands continuous innovation in power semiconductor technology. Addressing this need, the Infineon IPD60R460CE stands out as a premier 600V superjunction MOSFET from the revolutionary CoolMOS™ CE series. This power transistor is engineered to set new benchmarks in performance for a wide array of high-efficiency applications, including switch-mode power supplies (SMPS), power factor correction (PFC) stages, lighting, and industrial motor drives.

At the core of the IPD60R460CE's superior performance is its advanced superjunction (SJ) technology. This technology fundamentally redefines the key trade-off between on-state resistance (RDS(on)) and gate charge (Qg). The result is a device that offers an exceptionally low figure-of-merit (RDS(on) x Qg), which directly translates to minimized switching losses and conduction losses. This enables systems to operate at higher switching frequencies without sacrificing efficiency, allowing for the use of smaller passive components like magnetics and capacitors, thereby increasing overall power density.

A key highlight of the CoolMOS™ CE family is its integrated fast body diode. This feature is critical for performance in hard-switching topologies like bridges or power factor correction circuits. The diode exhibits excellent reverse recovery characteristics, significantly reducing switching losses associated with the diode's commutation and enhancing the reliability of the entire system. This makes the IPD60R460CE exceptionally robust in demanding operating conditions.

Furthermore, the transistor boasts outstanding avalanche ruggedness and high pulse current handling capability. This ensures a high level of operational durability and system longevity, even when facing voltage spikes or unexpected stress events common in real-world applications. Designers can leverage this robustness to create more reliable end-products with a reduced risk of field failure.

Designed with ease of use in mind, the IPD60R460CE is offered in the industry-standard TO-220 package, facilitating straightforward PCB layout and thermal management. Its combination of high efficiency, robustness, and a familiar package makes it an ideal drop-in replacement for older MOSFET generations, enabling immediate performance upgrades in existing designs with minimal engineering effort.

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The Infineon IPD60R460CE is a pinnacle of power switching technology, masterfully balancing ultra-low losses, high robustness, and design flexibility. It empowers engineers to push the boundaries of efficiency and power density in next-generation power conversion systems, solidifying its status as a top-tier component for high-performance applications.

Keywords:

1. CoolMOS™ CE

2. High-Efficiency

3. Low Figure-of-Merit

4. Integrated Body Diode

5. Avalanche Ruggedness