Infineon ISC080N10NM6ATMA1 100V N-Channel Power MOSFET for High-Efficiency Applications

In the realm of power electronics, achieving higher efficiency, improved power density, and superior thermal performance is a constant pursuit. The Infineon ISC080N10NM6ATMA1 100V N-channel power MOSFET stands out as a pivotal component engineered to meet these demanding requirements in a wide array of modern applications.

This MOSFET is built on Infineon's advanced OptiMOS 6 technology platform, which represents a significant leap forward in semiconductor performance. A key metric for any power switch is its on-state resistance, and this device boasts an exceptionally low RDS(on) of just 0.8 mΩ (max. at VGS = 10 V). This ultra-low resistance is fundamental to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. This characteristic is particularly crucial for high-current applications where even marginal losses can lead to significant thermal challenges.

The 100V drain-source voltage (VDS) rating makes the ISC080N10NM6ATMA1 exceptionally versatile. It is an ideal choice for a broad spectrum of circuits, including synchronous rectification in switch-mode power supplies (SMPS), motor control and drives, DC-DC converters, and power management in computing and telecommunications infrastructure. Its robust design ensures reliable operation in harsh environments.

Furthermore, the device features outstanding switching performance. The low gate charge (Qg) and figure-of-merit (FOM, RDS(on) x Qg) ensure fast switching transitions. This capability is essential for operating at higher frequencies, which allows for the use of smaller passive components like inductors and capacitors, thereby increasing the overall power density of the end product.

Housed in a SuperSO8 package, this MOSFET offers a compact footprint while providing superior thermal characteristics compared to standard SO-8 packages. The improved thermal efficiency ensures that the device can operate effectively under continuous high-load conditions, contributing to the long-term reliability of the system.

ICGOOODFIND: The Infineon ISC080N10NM6ATMA1 is a high-performance power MOSFET that sets a new benchmark for efficiency and power density. Its combination of ultra-low RDS(on), high voltage rating, fast switching speed, and excellent thermal performance makes it an superior component for designers aiming to push the boundaries of efficiency in power conversion systems.

Keywords: OptiMOS 6 Technology, Ultra-Low RDS(on), High-Efficiency Power Conversion, Synchronous Rectification, SuperSO8 Package.