Infineon BCR22PNH6327: 22V Low-Saturation PNP Transistor in SOT-363 Package

The Infineon BCR22PNH6327 is a low-saturation PNP bipolar junction transistor (BJT) designed for high-efficiency switching and amplification in space-constrained applications. Housed in an ultra-compact SOT-363 package, this transistor is engineered to deliver robust performance with minimal power loss, making it an ideal choice for modern portable and battery-operated devices.

A key feature of the BCR22PNH6327 is its low collector-emitter saturation voltage, which ensures reduced power dissipation during operation. This characteristic is critical for enhancing energy efficiency and extending battery life in applications such as power management, load switching, and signal amplification. With a collector-emitter voltage rating of 22V, the device offers sufficient headroom for a variety of low-voltage circuits, including those found in consumer electronics, IoT modules, and automotive systems.

The transistor’s SOT-363 package provides a footprint that is approximately 30% smaller than standard SOT-23 packages, enabling higher PCB density without compromising thermal or electrical performance. This makes it particularly suitable for miniaturized designs where board real estate is at a premium. Additionally, the device exhibits excellent gain and switching characteristics, ensuring reliable operation under demanding conditions.

ICGOODFIND: The Infineon BCR22PNH6327 combines high voltage tolerance, minimal saturation loss, and ultra-compact packaging, offering designers a versatile solution for efficient power control in next-generation electronic products.

Keywords:

Low-saturation

PNP Transistor

SOT-363

22V

Power Management