Infineon FP15R12KT3 1200V IGBT Module: Datasheet, Pinout, and Application Circuit Guide
The Infineon FP15R12KT3 is a high-performance 1200V IGBT module designed for robust power conversion applications. Integrating advanced IGBT and diode technology, this module is engineered to deliver high efficiency, low losses, and reliable operation in demanding environments. It is widely used in motor drives, industrial inverters, renewable energy systems, and UPS applications.
Key Features from the Datasheet
The datasheet highlights several critical parameters that define the module’s performance. It features a collector current (IC) of 15A at 80°C and a maximum voltage rating of 1200V. The module includes a three-phase bridge configuration with six IGBTs and corresponding freewheeling diodes. Key characteristics include low saturation voltage (VCE(sat)) for reduced conduction losses and high switching speed enabled by trench gate field-stop technology. The module also offers strong short-circuit robustness and is designed for low electromagnetic interference (EMI). The operating junction temperature ranges from -40°C to 150°C, ensuring performance under extreme conditions.
Pinout Configuration
Understanding the pinout is crucial for proper integration. The FP15R12KT3 module has multiple terminals for power, gate control, and auxiliary functions. The pinout includes:
- DC input terminals: P+ (positive DC bus) and N- (negative DC bus).
- Three-phase AC output terminals: U, V, W.
- Gate driver pins: Each IGBT (e.g., IGBT1 in upper switch of phase U) has a separate gate emitter pin (G1, E1) for individual control.
- Temperature sensor pin: Often included for thermal monitoring (NTC).
Proper isolation and signal routing are essential to avoid cross-talk and ensure safe operation.
Application Circuit Guide
A typical application circuit for the FP15R12KT3 in a three-phase inverter is shown below. The design includes:
- DC link capacitor bank placed close to the P+ and N- terminals to minimize stray inductance and suppress voltage spikes.
- Gate driver circuits for each IGBT, using isolated power supplies and optocouplers or digital isolators for noise immunity. Gate resistors (RGon and RGoff) are selected to optimize switching speed and overshoot.
- Current sensors (e.g., shunt resistors or Hall-effect sensors) in each phase for feedback control.
- Overcurrent and overtemperature protection circuits using comparators or microcontroller-based monitoring.
- Snubber circuits (if necessary) to reduce voltage transients during switching.
Example circuit block diagram:
DC Source → DC-Link Capacitors → FP15R12KT3 Module (with gate drivers) → Three-Phase Load (e.g., Motor)
Feedback loops for current, voltage, and temperature are integrated into the control logic (e.g., using an MCU or DSP).
ICGOOODFIND
The Infineon FP15R12KT3 is a versatile and high-efficiency IGBT module ideal for industrial power systems. Its balanced performance in switching and conduction losses, combined with robust packaging, makes it suitable for high-reliability applications. Proper attention to gate driving, thermal management, and circuit layout is key to maximizing its potential.
Keywords:
IGBT Module
1200V Rating
Three-Phase Inverter
Gate Driver Circuit
Thermal Management
