Infineon BGA231N7E6327: Low-Noise Amplifier for 5G and LTE Applications

The rapid expansion of 5G networks and the continued reliance on robust LTE infrastructure demand RF components that deliver exceptional performance, efficiency, and integration. Addressing this need, the Infineon BGA231N7E6327 stands out as a premier low-noise amplifier (LNA) specifically engineered for these advanced wireless applications. This device is pivotal in enhancing receiver sensitivity, a critical factor for maintaining strong and clear signal quality in modern telecommunications.

Housed in a compact and industry-standard 1.6 x 1.6 mm² TSLP-7 package, the BGA231N7E6327 is designed for space-constrained applications like smartphones, tablets, and IoT modules. Its core strength lies in its ultra-low noise figure of just 0.6 dB at 1.8 GHz. This exceptional characteristic ensures that the amplifier introduces minimal inherent noise, thereby significantly improving the signal-to-noise ratio (SNR) of the entire receiver chain. This is paramount for achieving higher data rates and more reliable connections, especially at the cell edge where signals are weakest.

Furthermore, the amplifier provides high gain of up to 19.5 dB, which effectively boosts desired weak signals from the antenna before they are processed by subsequent stages in the RF front-end (RFFE). Despite its high performance, the device is optimized for low power consumption, making it ideal for battery-operated devices. It operates from a single 3.3 V supply and incorporates an integrated bypass mode. This bypass feature is crucial for system power management, allowing the LNA to be switched off during periods of strong signal reception to save energy, while still passing the signal through with minimal insertion loss.

The BGA231N7E6327 offers excellent linearity, characterized by a high input third-order intercept point (IIP3), which enables it to handle strong interfering signals without distortion. Its wide frequency range covers key cellular bands from 700 MHz to 2700 MHz, making it a versatile solution for multi-band 4G LTE and 5G NR sub-6 GHz applications. The device also includes internal matching and DC-blocking capacitors, which simplifies PCB design, reduces the external component count, and accelerates time-to-market for product developers.

ICGOOODFIND

The Infineon BGA231N7E6327 is a highly integrated, high-performance LNA that is essential for optimizing receiver performance in next-generation communication devices. Its combination of an ultra-low noise figure, high gain, and excellent linearity in a miniature form factor makes it an superior choice for designers aiming to improve signal integrity and battery life in 5G and LTE applications.

Keywords: Low-Noise Amplifier (LNA), 5G Applications, Ultra-Low Noise Figure, RF Front-End (RFFE), Receiver Sensitivity