Infineon IMW120R060M1H: A 1200 V, 60 mΩ SiC Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency, greater power density, and improved thermal performance in power electronics is driving the widespread adoption of Wide Bandgap (WBG) semiconductors. Among these, Silicon Carbide (SiC) has emerged as a cornerstone technology for next-generation designs. The Infineon IMW120R060M1H stands out as a prime example, a 1200 V, 60 mΩ SiC MOSFET engineered to push the boundaries in demanding high-efficiency applications.

This device is a key component of Infineon’s CoolSiC™ MOSFET family, which is renowned for its superior switching performance and low losses. The inherent material properties of SiC allow this MOSFET to operate at significantly higher switching frequencies, temperatures, and efficiencies than its silicon-based counterparts. The low specific on-resistance (R DS(on)) of just 60 mΩ at 1200 V blocking voltage is a critical metric, directly translating to reduced conduction losses. This means that less energy is wasted as heat during the on-state operation, leading to cooler running systems and higher overall efficiency.

The benefits of the IMW120R060M1H extend far beyond just low conduction losses. Its fast switching capability minimizes both turn-on and turn-off energy losses (Eon/Eoff). This is a crucial advantage for applications like switched-mode power supplies (SMPS) and inverters, where switching losses can dominate the total power loss at high frequencies. By enabling faster switching, designers can utilize smaller passive components like inductors and capacitors, dramatically increasing the power density of the final system.

Furthermore, the device features a low gate charge (Qg) and intrinsic fast body diode with excellent reverse recovery characteristics. The low Qg simplifies gate driving requirements and reduces driving losses, while the robust body diode enhances reliability in hard-switching topologies, eliminating the need for external anti-parallel diodes in many cases.

The IMW120R060M1H is housed in a TO-247 3-pin package, offering a familiar footprint for engineers to upgrade existing silicon-based designs. Its high performance is essential across a broad spectrum of high-efficiency applications, including:

Solar inverters and energy storage systems (ESS)

Server and data center SMPS

Electric vehicle (EV) charging infrastructure

Industrial motor drives and automation

Uninterruptible power supplies (UPS)

ICGOOODFIND: The Infineon IMW120R060M1H is a high-performance SiC MOSFET that encapsulates the key benefits of WBG technology. It is a pivotal component for engineers aiming to achieve breakthrough efficiency, maximize power density, and improve the thermal management of their high-power systems, solidifying the transition from silicon to Silicon Carbide.

Keywords: SiC MOSFET, High Efficiency, Fast Switching, Low Losses, Power Density